Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe
Author:
Gasan-Zade S.G.,Strikha M.V.,Shepelskii G.A.
Abstract
AbstractThe intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg1−xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5–2.7 kbar, E = 50–55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4–6 times) occur.
Subject
Electrical and Electronic Engineering,Radiation,General Materials Science
Reference3 articles.
1. and ko Impurity states in uniaxi ally compressed degenerate band semiconductors;Bakhanova;Phys Solid State,1990
2. and Impurity states and optical transitions in uniaxially deformed narrow gap semiconduc tors;Strikha;Phys Stat Sol,1994
3. Band structure of grey tin under uniaxial stress Solid State;Cardona;Commun,1967