Hydrostatic Pressure Effect on Point Defect Electronic States in Narrow-Gap and Gapless Semiconductors-Reference-Cited by-同舟云学术

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Hydrostatic Pressure Effect on Point Defect Electronic States in Narrow-Gap and Gapless Semiconductors

Published:1994-01-01 Issue:1 Volume:181 Page:181-188
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Strikha M. V.,Vasko F. T.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Theory of Defects in Solids, Clarendon Press, Oxford 1975.

2. and , Point Defects in Semiconductors, Springer-Verlag, Berlin 1981.

3. Band Structure of Semiconductors, Pergamon Press, Oxford 1982.

4. On the photoionization of deep impurity centers in semiconductors

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