Silicon–germanium (SiGe)-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies
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2 articles.
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1. Threading Dislocation Reduction of Ge by Introducing a SiGe/Ge Superlattice;ECS Journal of Solid State Science and Technology;2021-03-01
2. Electrical characterization SiGe channel nano-scale FinFETs;NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM2020;2021