Raman and infrared spectroscopy of GaN nanocrystals grown by chloride-hydride vapor-phase epitaxy on oxidized silicon-Reference-Cited by-同舟云学术

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Raman and infrared spectroscopy of GaN nanocrystals grown by chloride-hydride vapor-phase epitaxy on oxidized silicon

Published:2003-08 Issue:8 Volume:37 Page:940-943
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bessolov V. N.,Zhilyaev Yu. V.,Konenkova E. V.,Fedirko V. A.,Zahn D. R. T.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1601663.pdf

Reference11 articles.

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2. M. Benaissa, M. Jose-Yacaman, J. M. Hernander, et al., Phys. Rev. B 54, 17763 (1996).

3. G. S. Cheng, L. D. Zhang, Y. Zhou, et al., Appl. Phys. Lett. 75, 2455 (1999).

4. M. H. Kim, Y.-C. Bang, N. M. Park, et al., Appl. Phys. Lett. 78, 2858 (2001).

5. A. Munkholm, C. Thompson, M. V. Raman Murty, et al., Appl. Phys. Lett. 77, 1626 (2000).

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