Manifestations of the deneutralization of mobile charges in SiO2 in the spectroscopy of the silicon-oxide interface-Reference-Cited by-同舟云学术

Manifestations of the deneutralization of mobile charges in SiO2 in the spectroscopy of the silicon-oxide interface

Published:1998-12 Issue:12 Volume:32 Page:1289-1292
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Dmitriev S. G.,Markin Yu. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187616.pdf

Reference18 articles.

1. A. P. Baraban, V. V. Bulavinov, and P. P. Konorov, Electronics of SiO 2 Layers on Silicon [in Russian], Izd. LGU, Leningrad (1988).

2. V. N. Vertoprakhov, B. M. Kuchumov, and E. G. Sal’man, Structure and Properties of Si/SiO 2 /M Structures [in Russian], Nauka, Sib. Otd., Novosibirsk (1981).

3. Yu. A. Gorokhovatskii and G. A. Bordovskii, Thermally Stimulated Current Spectroscopy of High-Resistivity Semiconductors and Insulators [in Russian], Nauka, Moscow (1991).

4. B. R. Singh and K. Singh, Microelectron. Reliab. 15, 385 (1976).

5. T. Ando, A. B. Fowler, and F. Stern, “Electronic properties of two-dimensional systems,” Rev. Mod. Phys. 54, 437–672 (1982) [Mir, Moscow (1985)].

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