Ionic current in MOS structures
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Link
https://link.springer.com/content/pdf/10.1007/BF03179707.pdf
Reference10 articles.
1. Yamin (M.), Charge Storage Effects in Silicon Dioxide Films.ieeeTrans. Elect. Dev. (1965),ED-12, pp. 86–96.
2. Chou (N.J.), Application of Triangular voltage Sweep Method to Mobile Charge Studies inmos Structures,J. Electrochem. Soc. (1971),118, pp. 601–609.
3. Przewlocki (H. M.),Marciniak (W.), The Triangular Voltage Sweep Method as a Tool in Studies of Mobile Charge inmos Structures.Phys. Stat. Sol. (1975), (a)29, pp. 265–274.
4. Dmitriev (sg),Markin (Y.V), « Manifestations of the deneutralization of mobile charges in SiO2 in the spectroscopy of the silicon-oxide interface »,Semiconductors (1998),32, no 12, pp.1289–1292.
5. Kuhn (M.),Silversmith (D. J.), Ionic Contamination and Transport of Mobile Ions inmos Structures,J. Electrochem. Soc. (1971),118, pp. 966–970.
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