Photoelectric and photomagnetic properties of the gapless semiconductor CdxHg1−x Te in the infrared and millimeter spectral regions when an energy gap is opened-Reference-Cited by-同舟云学术

Photoelectric and photomagnetic properties of the gapless semiconductor CdxHg1−x Te in the infrared and millimeter spectral regions when an energy gap is opened

Published:1997-01 Issue:1 Volume:31 Page:29-35
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Gasan-zade S. G.,Sal’kov E. A.,Shepel’skii G. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187047.pdf

Reference16 articles.

1. R. Dornhaus, G. Nimtz, and B. Schlicht, Narrow-Gap Semiconductors [in Russian], Springer-Verlag, Berlin-New York (1985).

2. S. G. Gasan-zade, V. A. Romaka, E. A. Sal’kov, and G. A. Shepel’skii, JETP Lett. 39, 678 (1984).

3. Yu. G. Arapov, A. B. Davydov, and G. L. Shtrapenin, Fiz. Tekh. Poluprovodn. 18, 1185 (1984) [Sov. Phys. Semicond. 18, 742 (1984)].

4. Yu. N. Gavrilyuk, S. G. Gasan-zade, E. A. Sal’kov, and G. A. Shepel’skii, Fiz. Tekh. Poluprovodn. 13, 1640 (1979) [Sov. Phys. Semicond. 13, 955 (1979)]; S. G. Gasan-zade, E. A. Sal’kov, and G. A. Shepelsky, in Digest of the Second International Conference on Millimeter Wave and Far-Infrared Technology, Beijing (1992), p. 278.

5. I. M. Tsidilkovski, G. I. Harus, and N. G. Shelushinina, Adv. Phys. 34, 43 (1985).

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