The band structure and the double metal-insulator-metal phase transition in the conductivity of elastically strained zero-gap Cd x Hg1−x Te-Reference-Cited by-同舟云学术

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The band structure and the double metal-insulator-metal phase transition in the conductivity of elastically strained zero-gap Cd x Hg1−x Te

Published:2007-03 Issue:3 Volume:41 Page:266-271
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Venger E. F.,Gasan-zade S. G.,Strikha M. V.,Shepelskiĭ G. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607030049.pdf

Reference7 articles.

1. F. T. Vas’ko, S. G. Gasan-zade, V. A. Romaka, and G. A. Shepel’skiĭ, Pis’ma Zh. Éksp. Teor. Fiz. 41, 100 (1988) [JETP Lett. 41, 120 (1988)].

2. A. V. Germanenko, G. M. Min’kov, E. L. Rumyantseva, and O. É. Rut, Zh. Éksp. Teor. Fiz. 94(8), 242 (1988) [Sov. Phys. JETP 67, 1654 (1988)].

3. A. V. Germanenko and G. M. Minkov, Phys. Status Solidi B 184, 9 (1994).

4. E. V. Bakhanova and F. T. Vas’ko, Fiz. Tverd. Tela (Lemingrad) 32, 86 (1990) [Sov. Phys. Solid State 32, 47 (1990)].

5. F. T. Vas’ko and M. V. Strikha, Ukr. Fiz. Zh. 35, 617 (1990).

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1. Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe;Opto-Electronics Review;2010-01-01

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