Parameters of metal one-electron transistors based on various materials-Reference-Cited by-同舟云学术

Parameters of metal one-electron transistors based on various materials

Published:2000-08 Issue:8 Volume:34 Page:975-980
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Abramov I. I.,Novik E. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1188111.pdf

Reference11 articles.

1. NATO ASI Series B: Physica, Vol. 294: Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures, Ed. by H. Grabert and M. H. Devoret (Plenum, New York, 1992).

2. Zh. I. Alferov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 3 (1998) [Semiconductors 32, 1 (1998)].

3. Int. J. Electron. 86(5) (1999).

4. I. I. Abramov and E. G. Novik, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33(11), 1388 (1999) [Semiconductors 33, 1254 (1999)].

5. I. I. Abramov, I. A. Goncharenko, and E. G. Novik, Pis’ma Zh. Tekh. Fiz. 24(8), 16 (1998) [Tech. Phys. Lett. 24, 293 (1998)].

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