Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion)-Reference-Cited by-同舟云学术

Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion)

Published:1999-12 Issue:12 Volume:33 Page:1279-1283
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Neimash V. B.,Puzenko E. A.,Kabaldin A. N.,Kraichinskii A. N.,Kras’ko N. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187907.pdf

Reference18 articles.

1. C. S. Fuller, J. A. Ditzenberg, N. B. Hannay, and E. Buehler, Phys. Rev. 96, 833 (1954).

2. V. M. Babich, N. I. Bletskan, and E. F. Venger, Oxygen in Silicon Single Crystals [in Russian], Naukova Dumka, Kiev, 1997.

3. L. I. Murin and V. P. Markevich, in Proceedings of the International Conference on Science and Technology of Defect Control in Semiconductors, Yokohama, Japan, 1989, edited by K. Sumino (North-Holland, Amsterdam, 1990), p. 190.

4. W. Kaizer, H. Frisch, and H. Reiss, Phys. Rev. 112, 1546 (1958).

5. O. M. Kabaldin, V. B. Neimash, V. M. Tsmots’, V. I. Shakhovtsov, and V. S. Shtim, Ukr. Fiz. Zh. 40, 218 (1995).

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