Effect of deep levels on current excitation in 6H-SiC diodes-Reference-Cited by-同舟云学术

Effect of deep levels on current excitation in 6H-SiC diodes

Published:1997-10 Issue:10 Volume:31 Page:1049-1052
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kuznetsov N. I.,Edmond J. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187023.pdf

Reference23 articles.

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3. M. M. Anikin, A. S. Zubrilov, A. A. Lebedev, A. M. Strel’chuk, and V. E. Chelnokov, F. M. Berkovskii, S. M. Ryvkin, and N. B. Strokan, Fiz. Tekh. Poluprovodn. 25, 479 (1991) [Sov. Phys. Semicond. 25, 289 (1991)].

4. N. T. Son, E. Sorman, W. M. Chen, O. Kordina, B. Monemar, and E. Janzen, Appl. Phys. Lett. 65, 2687 (1994).

5. St. G. Muller, D. Hoffmann, A. Winnacker, E. N. Mokhov, and Yu. A. Vodakov, Inst. Phys. Conf. Ser. 142, 361 (1996).

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