Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an n +–p-junction and an antireflective porous silicon film-Reference-Cited by-同舟云学术

Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an n +–p-junction and an antireflective porous silicon film

Published:2016-11 Issue:11 Volume:61 Page:1694-1697
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Tregulov V. V.,Stepanov V. A.,Litvinov V. G.,Ermachikhin A. V.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S106378421611027X.pdf

Reference9 articles.

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2. Hyukyong Kwon, Jaedoo Lee, Minjeong Kim, and Soohong Lee, ISRN Nanotechnol. 2011, Article ID 716409 (2011).

3. Handbook of Porous Silicon, Ed. by L. Canham (Springer, 2014).

4. V. V. Tregulov, Tech. Phys. 59, 1413 (2014).

5. M. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970; Mir, Moscow, 1973).

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