Peculiarities of the capacitance-voltage characteristic of a photoelectric solar energy convertor based on a silicon p-n junction with a porous silicon antireflection coating-Reference-Cited by-同舟云学术

Peculiarities of the capacitance-voltage characteristic of a photoelectric solar energy convertor based on a silicon p-n junction with a porous silicon antireflection coating

Published:2014-09 Issue:9 Volume:59 Page:1413-1414
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Tregulov V. V.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063784214090254.pdf

Reference8 articles.

1. V. V. Tregulov and G. N. Skoptsova, Vestn. Povolzh’ya, No. 2, 44 (2013).

2. G. P. Peka, Physical Phenomena on Semiconductor Surfaces (Vysshaya Shkola, Kiev, 1984).

3. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).

4. S. P. Zimin, Semiconductors 34, 353 (2000).

5. J. Fang and L. Pilon, Appl. Phys. Lett. 101, 011909 (2012).

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