Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation-Reference-Cited by-同舟云学术

Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

Published:2015-09 Issue:9 Volume:60 Page:1348-1352
ISSN:1063-7842
Container-title:Technical Physics
language:en
Short-container-title:Tech. Phys.

Author:

Komarov F. F.,Ismailova G. A.,Mil’chanin O. V.,Parkhomenko I. N.,Zhusipbekova F. B.,Yar-Mukhamedova G. Sh.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063784215090078.pdf

Reference9 articles.

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2. N. Gerasimenko and Yu. Parkhomen’ko, World of Materials and Nanotechnologies. Silicon—Material of Nanoelectronics (Tekhnosfera, Moscow, 2007).

3. F. Komarov, L. Vlasukova, W. Wesch, A. Kamarou, O. Milchanin, S. Grechnyi, A. Mudryi, and A. Ivaniukovich, Nucl. Instrum. Methods Phys. Res. B 266, 3557 (2008).

4. F. Komarov, L. Vlasukova, O. Milchanin, W. Wesch, E. Wendler, and J. Zuk, Mater. Sci. Eng., B 178, 1169 (2013).

5. F. F. Komarov and A. F. Komarov, Physical Processes on Ion Implantation in Solids (UP Tekhno-Print, Minsk, 2001).

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