The dominant mechanisms of charge-carrier scattering in lead telluride-Reference-Cited by-同舟云学术

The dominant mechanisms of charge-carrier scattering in lead telluride

Published:1997-02 Issue:2 Volume:31 Page:173-176
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Zayachuk D. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187322.pdf

Reference19 articles.

1. Yu. I. Ravich, B. A. Efimova, and I. A. Smirnov, Methods for Investigating Semiconductors in Application to the Lead Chalcogenides PbTe, PbSe, and PbS [in Russian], Nauka, Moscow, 1968.

2. Yu. I. Ravich, B. A. Efimova, and V. I. Tamarchenko, Phys. Status Solidi B 43, 11 (1971); 43, 453 (1971).

3. W. Szymanska, Postepy Fizyki 26, 5 (1975).

4. L. Palmetshofer, K. H. Gresslehuer, L. Ratschbacher, and A. Lopez-Otero, Lect. Not. Phys. 152, 391 (1982).

5. G. Nimtz and B. Schlicht, Narrow-Gap Semiconductors, Berlin, 1985, p. 1.

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