Affiliation:
1. Massachusetts Institute of Technology
2. Landau Institute for Theoretical Physics
Abstract
We propose and study theoretically a new mechanism of
electron-impurity scattering in doped seminconductors with large
dielectric constant. It is based upon the idea of vector character of
deformations caused in the crystalline lattice by any point defects
siting asymmetrically in the unit cell. In result, local lattice
compression due to the elastic deformations decay as
1/r2
with distance from impurity. Electron scattering (due to standard
deformation potential) on such defects leads to low-temperature mobility
μ(n)
scaling with electron density n
of the form μ(n)∝n−2/3
that is close to experimental observations on a number of relevant
materials.
Funder
Russian Science Foundation
Subject
General Physics and Astronomy