Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation-Reference-Cited by-同舟云学术

Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation

Published:1998-02 Issue:2 Volume:32 Page:120-122
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Khirunenko L. I.,Shakhovtsov V. I.,Shumov V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187329.pdf

Reference3 articles.

1. A. A. Bugai, V. M. Maksimenko, B. M. Turovskii, L. I. Khirunenko, V. I. Shakhovtsov, and N. I. Gorbacheva, Fiz. Tekh. Poluprovodn. 18, 2020 (1984) [Sov. Phys. Semicond. 18, 1260 (1984)].

2. I. G. Atabaev, M. S. Saidov, L. I. Khirunenko, V. I. Shakhovtsov, V. K. Shinkarenko, L. I. Shpinar, and A. Yusupov, Fiz. Tekh. Poluprovodn. 21, 570 (1987) [Sov. Phys. Semicond. 21, 350 (1987)].

3. L. I. Khirunenko, V. I. Shakhovtsov, V. K. Shinkarenko, L. I. Shpinar, and I. I. Yakovlets, Fiz. Tekh. Poluprovodn. 21, 562 (1987) [Sov. Phys. Semicond. 21, 345 (1987)].

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