High-power lasers (λ = 940–980 nm) based on asymmetric GaInAs/GaInAsP/AlGaAs separate-confinement heterostructure-Reference-Cited by-同舟云学术

High-power lasers (λ = 940–980 nm) based on asymmetric GaInAs/GaInAsP/AlGaAs separate-confinement heterostructure

Published:2006-06 Issue:6 Volume:40 Page:745-748
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vinokurov D. A.,Stankevich A. L.,Shamakhov V. V.,Kapitonov V. A.,Leshko A. Yu.,Lyutetskiĭ A. V.,Nikolaev D. N.,Pikhtin N. A.,Rudova N. A.,Sokolova Z. N.,Slipchenko S. O.,Khomylev M. A.,Tarasov I. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606060224.pdf

Reference12 articles.

1. D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 388 (2005) [Semiconductors 39, 370 (2005)].

2. N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 374 (2004) [Semiconductors 38, 360 (2004)].

3. S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1477 (2004) [Semiconductors 38, 1430 (2004)].

4. A. Yu. Leshko, A. V. Lyutetskiĭ, N. A. Pikhtin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 1393 (2002) [Semiconductors 36, 1308 (2002)].

5. N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, et al., Electron. Lett. 40, 1413 (2004).

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