On the photopleochroism coefficient and its temperature dynamics in native oxide-p-InSe heterojunctions-Reference-Cited by-同舟云学术

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On the photopleochroism coefficient and its temperature dynamics in native oxide-p-InSe heterojunctions

Published:2014-06 Issue:6 Volume:48 Page:776-778
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Katerynchuk V. M.,Kudrynskyi Z. R.,Kovalyuk Z. D.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782614060153.pdf

Reference8 articles.

1. F. P. Kesamanly, V. Yu. Rud’, and Yu. V. Rud’, Semiconductors 30, 1001 (1996).

2. F. P. Kesamanly, V. Yu. Rud’, and Yu. V. Rud’, Semiconductors 33, 483 (1999).

3. Z. D. Kovalyuk, V. N. Katerynchuk, A. V. Zaslonkin, M. V. Tovarnitskii, and V. I. Duplavyi, Ukraine Patent No. 101001, Byull. No. 4 (2013).

4. N. M. Mekhtiev, Yu. V. Rud’, and E. Yu. Salaev, Sov. Phys. Semicond. 12, 924 (1978).

5. V. N. Katerynchuk, Z. D. Kovalyuk, and A. V. Zaslonkin, Tech. Phys. Lett. 25, 520 (1999).

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1. Growth of InSe:Mn semiconductor crystals by Bridgman–Stockbarger technique and analysis of electron irradiation effects on Sn/InSe:Mn Schottky diodes;Radiation Effects and Defects in Solids;2016-05-03

2. Photoelectric properties of n-ITO/p-GaTe heterojunctions;Semiconductors;2015-05

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