Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity-Reference-Cited by-同舟云学术

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Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity

Published:2012-12 Issue:12 Volume:46 Page:1493-1496
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Zvonkov B. N.,Vikhrova O. V.,Danilov Yu. A.,Drozdov Yu. N.,Drozdov M. N.,Kalent’eva I. L.,Kudrin A. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378261212024X.pdf

Reference8 articles.

1. M. Nazmul, T. Amemiya, and Y. Shyto, Phys. Rev. Lett. 95, 017201 (2005).

2. A. M. Nazmul, S. Sugahara, and M. Tanaka, J. Cryst. Growth 251, 303 (2003).

3. B. A. Aronzon, A. S. Lagutin, V. V. Ryl’kov, V. V. Tugushev, V. N. Men’shov, A. V. Lashkul, R. Laiho, O. V. Vikhrova, Yu. A. Danilov, and B. N. Zvonkov, JETP Lett. 87, 164 (2008).

4. O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, B. N. Zvonkov, I. L. Kalent’eva, and A. V. Kudrin, Tech. Phys. Lett. 35, 643 (2009).

5. B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, E. S. Demidov, P. B. Demina, M. V. Dorokhin, Yu. N. Drozdov, V. V. Podol’skii, and M. V. Sapozhnikov, J. Opt. Tecnol. 75, 389 (2008).

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