Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures-Reference-Cited by-同舟云学术

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Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures

Published:2008-02 Issue:2 Volume:42 Page:183-187
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kachurin G. A.,Cherkova S. G.,Volodin V. A.,Marin D. V.,Deutschmann M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608020103.pdf

Reference24 articles.

1. E. I. Shtyrkov, I. B. Khaĭbullin, M. F. Galyautdinov, and M. M. Zaripov, Opt. Spektrosk. 38, 1031 (1975) [Opt. Spectrosc. 38, 595 (1975)].

2. G. A. Kachurin, N. B. Pridachin, and L. S. Smirnov, Fiz. Tekh. Poluprovodn. (Leningrad) 9, 1428 (1975) [Sov. Phys. Semicond. 9, 946 (1975)].

3. J. A. Van Vechten, R. Tsu, and W. F. Saris, Phys. Lett. A 74A, 422 (1979).

4. J. Grun, R. P. Fischer, M. Peckerar, et al., Appl. Phys. Lett. 77, 13 (2000).

5. T. Takamori, R. Messier, and R. Roy, Appl. Phys. Lett. 20, 201 (1972).

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1. Crystallization of Amorphous Si Nanoclusters in SiOx Films Using Femtosecond Laser Pulse Annealings;Journal of Nanoscience and Nanotechnology;2012-11-01

2. The Effects of Femtosecond Laser Irradiation and Thermal Annealing on the Optoelectronic Properties of Silicon Supersaturated with Sulfur;Chinese Physics Letters;2012-04

3. Properties of Al2O3: nc-Si nanostructures formed by implantation of silicon ions into sapphire and amorphous films of aluminum oxide;Physics of the Solid State;2009-02

4. Effect of pressure annealing on formation of light-emitting Si nanocrystals in Si rich SiO2;physica status solidi (a);2009-01

5. Effect of swift heavy ions on silicon nanostructures;2008 9th International Workshop and Tutorials on Electron Devices and Materials;2008-07

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