Effect of halogens on the formation and properties of the porous silicon layers-Reference-Cited by-同舟云学术

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Effect of halogens on the formation and properties of the porous silicon layers

Published:2009-01 Issue:1 Volume:43 Page:92-95
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bolotov V. V.,Sten’kin Yu. A.,Davletkil’deev N. A.,Krivozubov O. V.,Ponomareva I. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609010187.pdf

Reference11 articles.

1. D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli, Fiz. Tekh. Poluprovodn. 34, 1130 (2000) [Semiconductors 34, 1090 (2000)].

2. G. K. Moroz and A. V. Zherzdev, Fiz. Tekh. Poluprovodn. 28, 949 (1994) [Semiconductors 28, 550 (1994)].

3. F. F. Vol’kenshtein, Electron Processes on Semiconductor Surface at khemosorbtsii (Nauka, Moscow, 1987) [in Russian].

4. L. Boarino, C. Baratto, F. Geobaldo, et al., Mater. Sci. Eng. B 69–70, 210 (2000).

5. E. A. Konstantinova, L. A. Osminkina, K. S. Sharov, et al., Zh. Éksp. Teor. Fiz. 126, 857 (2004) [JETP 99, 741 (2004)].

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1. AES and XPS studies of a por-Si/SnOx nanocomposite formed using a powerful ion beam of nanosecond duration;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2013-01

2. Nanocomposite por-Si/SnOx layers formation for gas microsensors;Materials Science and Engineering: B;2012-01

3. Formation of por-Si/SnOx nanocomposite by high-power ion beams of nanosecond duration;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2011-12

4. Fabrication of por-Si/SnO x nanocomposite layers for gas microsensors and nanosensors;Semiconductors;2011-05

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