Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn δ layer-Reference-Cited by-同舟云学术

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Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn δ layer

Published:2013-12 Issue:12 Volume:47 Page:1591-1594
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Pavlova E. D.,Gorshkov A. P.,Bobrov A. I.,Malekhonova N. V.,Zvonkov B. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782613120166.pdf

Reference10 articles.

1. M. V. Dorokhin, Yu. A. Danilov, P. B. Demina, V. D. Kulakovskii, O. V. Vikhrova, S. V. Zaitsev, and B. N. Zvonkov, J. Phys. D: Appl. Phys. 41, 245110 (2008).

2. R. C. Myers, A. C. Gossard, and D. D. Awschalom, Phys. Rev B 69, 161305 (2004).

3. Yu. V. Vasilieva, Yu. A. Danilov, Ant. A. Ershov, B. N. Zvonkov, E. A. Uskova, A. B. Davydov, B. A. Aronzon, S. V. Gudenko, V. V. Ryl’kov, A. B. Granovskii, E. A. Gan’shina, N. S. Perov, and A. N. Vinogradov, Semiconductors 39, 77 (2005).

4. M. V. Dorokhin, S. V. Zaitsev, A. S. Brichkin, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, V. D. Kulakovskii, M. M. Prokof’eva, A. E. Sholina, Phys. Solid State 52, 2291 (2010).

5. User’s Guide: Precision Ion Polishing System (Gatan Inc., 1998).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Prospects for Application of Gallium Arsenide Doped with Transition Metals as a Material for Spintronics;Nanostructure Science and Technology;2018

2. Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy;JETP Letters;2014-10

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