Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region-Reference-Cited by-同舟云学术

Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

Published:2017-10 Issue:10 Volume:51 Page:1370-1376
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Krivyakin G. K.,Volodin V. A.,Shklyaev A. A.,Mortet V.,More-Chevalier J.,Ashcheulov P.,Remes Z.,Stuchliková T. H.,Stuchlik J.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782617100128.pdf

Reference26 articles.

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2. N. G. Galkin, K. N. Galkin, I. M. Chernev, R. Fajgar, T. H. Stuchlikova, Z. Remes, and J. Stuchlik, Phys. Status Solidi C 10, 1712 (2013).

3. N. G. Galkin, K. N. Galkin, I. M. Chernev, R. Fajgar, T. H. Stuchlikova, J. Stuchlik, and Z. Remes, JJAP Conf. Proc. 3, 011104 (2015).

4. G. K. Krivyakin, V. A. Volodin, S. A. Kochubei, G. N. Kamaev, A. Purkrt, Z. Remes, R. Fajgar, T. H. Stuchliková, and J. Stuchlik, Semiconductors 50, 935 (2016).

5. D. L. Staebler and C. R. Wronski, Appl. Phys. Lett. 34, 292 (1997).

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