Effect of atmospheric-air pressure on charge transport in structures with oxidized porous silicon-Reference-Cited by-同舟云学术

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Effect of atmospheric-air pressure on charge transport in structures with oxidized porous silicon

Published:2007-08 Issue:8 Volume:41 Page:925-929
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bilenko D. I.,Belobrovaya O. Ya.,Zharkova E. A.,Terin D. V.,Khasina E. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607080118.pdf

Reference14 articles.

1. M. Ben-Chorin and A. Kux, Appl. Phys. Lett. A 64, 481 (1991).

2. S. V. Slobodchikov, D. N. Goryachev, Kh. M. Salikhov, and O. M. Sreseli, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 340 (1999) [Semiconductors 33, 339 (1999)].

3. D. Bilenko, O. Belobrovaja, E. Jarkova, et al., Sens. Actuators A 79, 147 (2000).

4. D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 490 (2002) [Semiconductors 36, 466 (2002)].

5. D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova, et al., Mikrosist. Tekh., No. 11, 14 (2001).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrophysical properties of mesoporous silicon passivated by iron;Semiconductors;2013-05

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