In situ measurement of porous silicon and the influence of ambient gas on its properties-Reference-Cited by-同舟云学术

In situ measurement of porous silicon and the influence of ambient gas on its properties

Published:2000-02 Issue:2 Volume:79 Page:147-152
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Bilenko D.I,Belobrovaja O.Ya,Coldobanova O.Yu,Jarkova E.A,Khasina E.I,Polyanskaya V.P,Melnikova T.E,Mysenko I.B,Smirnov V.V,Filippova G.O

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Porous silicon: base material for nanotechnologies;Jeske;Electrochim. Acta,1995

2. Electrophysical and optical properties of porous silicon;Bilenko;Phys. Tech. Semicond.,1983

3. Adsorbate effects on photoluminescence and electrical conductivity of porous silicon;Ben-Chorin;Appl. Phys. Lett.,1994

4. Nonlinear electrical transport in porous silicon;Ben-Chorin;Phys. Rev. B,1994

5. Mechanisms of molecule adsorption influence on recombination processes in porous silicon;Kashkarov;Phys. Tech. Semicond.,1996

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