Defects in the crystal structure of Cd x Hg1 − x Te layers grown on the Si (310) substrates-Reference-Cited by-同舟云学术

Defects in the crystal structure of Cd x Hg1 − x Te layers grown on the Si (310) substrates

Published:2011-07 Issue:7 Volume:45 Page:926-934
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Yakushev M. V.,Gutakovsky A. K.,Sabinina I. V.,Sidorov Yu. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611070232.pdf

Reference27 articles.

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3. Yu. G. Sidorov, S. A. Dvoretskii, V. S. Varavin, N. N. Mi- khailov, M. V. Yakushev, and I. V. Sabinina, Fiz. Tekh. Poluprovodn. 35, 1092 (2001) [Semiconductors 35, 1045 (2001)].

4. Yu. G. Sidorov, S. A. Dvoretskii, N. N. Mikhailov, V. S. Varavin, A. P. Antsiferov, and M. V. Yakushev, Optich. Zh. 67(1), 39 (2000).

5. W. Kern and D. A. Puotinen, RCA Rev. 31, 187 (1970).

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