Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films-Reference-Cited by-同舟云学术

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Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

Published:2016-07 Issue:7 Volume:50 Page:920-923
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ivanov P. A.,Kudoyarov M. F.,Kozlovski M. A.,Potapov A. S.,Samsonova T. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782616070071.pdf

Reference9 articles.

1. V. A. Kozlov and V. V. Kozlovski, Semiconductors 35, 735 (2001).

2. H. Kaneko and T. Kimoto, Appl. Phys. Lett. 98, 262106 (2011).

3. V. V. Kozlovski, A. A. Lebedev, and E. V. Bogdanova, J. Appl. Phys. 117, 155702 (2015).

4. A. A. Lebedev, A. I. Veinger, D. V. Davydov, V. V. Kozlovski, N. S. Savkina, and A. M. Strel’chuk, Semiconductors 34, 861 (2000).

5. A. A. Lebedev, V. V. Kozlovski, S. V. Belov, E. V. Bogdanova, and G. A. Oganesyan, Semiconductors 45, 1145 (2011).

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of Fermi-level depinning in quenching of V⁴⁺ related photoluminescence in semi-insulating 4H-SiC;Semiconductor Science and Technology;2022-08-18

2. High-Voltage Avalanche 4H-SiC Diodes with a Protective Semi-Insulating Area;Technical Physics Letters;2021-12-13

3. TCAD Simulation of High-Voltage 4H-SiC Diodes with an Edge Semi-Insulating Region;Semiconductors;2021-02

4. High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination;Semiconductors;2021-02

5. The Influence of Heat Treatment on the Electrical Characteristics of Semi-Insulating SiC Layers Obtained by Irradiating n-SiC with High-Energy Argon Ions;Technical Physics Letters;2018-03

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