High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination-Reference-Cited by-同舟云学术

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High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination

Published:2021-02 Issue:2 Volume:55 Page:243-249
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ivanov P. A.,Lebedeva N. M.,Il’inskaya N. D.,Kudoyarov M. F.,Samsonova T. P.,Kon’kov O. I.,Zadiranov Yu. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782621020147.pdf

Reference11 articles.

1. T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications (Wiley-IEEE, New York, 2014).

2. D. Alok, B. J. Baliga, and P. K. McLarty, IEEE Electron Dev. Lett. 15, 394 (1994).

3. D. Alok and B. J. Baliga, IEEE Trans. Electron Dev. 44, 1013 (1997).

4. A. Itoh, T. Kimoto, and H. Matsunami, IEEE Electron Dev. Lett. 17, 139 (1996).

5. M. H. Joo, K. H. Lee, J. H. Song, and S. Im, Mater. Sci. Eng. B 71, 224 (2000).

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1. Influence of heating of charge carriers on the contact resistance of the Schottky barrier;AIP Conference Proceedings;2024

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