Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC
Author:
Publisher
Pleiades Publishing Ltd
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1134/S1063782609050145.pdf
Reference15 articles.
1. D. J. Ewing, L. M. Porter, Q. Wahab, and X. Ma, J. Appl. Phys. 101, 114514 (2007).
2. W. Bahng, H. J. Cheong, I. H. Kang, S. J. Kim, S. C. Kim, S.-J. Joo, and N.-K. Kim, Mater. Sci. Forum 556–557, 595 (2007).
3. Y. Negoro, K. Katsumoto, T. Kimoto, and H. Matsunami, Mater. Sci. Forum 457–460, 933 (2004).
4. X. Ma, P. Sadagopan, and T. S. Sudarshan, Phys. Status Solidi A 203, 643 (2006).
5. Q. Wahab, T. Kimoto, A. Ellison, C. Hallin, M. Tuominen, R. Yakimova, A. Henry, J. P. Bergman, and E. Janzen, Appl. Phys. Lett. 72, 445 (1998).
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lagging Thermal Annealing for Barrier Height Uniformity Evolution of Ni/4H-SiC Schottky Contacts;IEEE Transactions on Electron Devices;2024-04
2. SiC-based electronics (100th anniversary of the Ioffe Institute);Uspekhi Fizicheskih Nauk;2018-10
3. Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling;Journal of Physics: Conference Series;2017-11
4. On a chaotic potential at the surface of a compensated semiconductor under conditions of the self-assembly of electrically active defects;Semiconductors;2015-09
5. Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes;Semiconductors;2013-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3