Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers-Reference-Cited by-同舟云学术

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Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers

Published:2017-08 Issue:8 Volume:51 Page:1081-1086
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Mnatsakanov T. T.,Tandoev A. G.,Levinshtein M. E.,Yurkov S. N.,Palmour J. W.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782617080231.pdf

Reference18 articles.

1. L. M. Hillkirk, Solid State Electron. 48, 2181 (2004).

2. M. E. Levinshtein, T. T. Mnatsakanov, P. A. Ivanov, J. W. Palmour, M. K. Das, and B. A. Hull, Semicond. Sci. Technol. 23, 085011 (2008).

3. J. W. Palmour, M. E. Levinshtein, P. A. Ivanov, and Q. J. Zhang, J. Phys. D: Appl. Phys. 48, 235103 (2015).

4. D. L. Scharfetter, Solid State Electron. 8, 299 (1965).

5. A. Yu and E. Snow, Solid State Electron. 12, 155 (1969).

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1. I–V Characteristics of High-Power Diode Structures with Sharply Asymmetric Injection Ability of the Emitters;Semiconductors;2021-12

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