A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “a statistical method of deep-level transient spectroscopy in semiconductors”-Reference-Cited by-同舟云学术

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A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “a statistical method of deep-level transient spectroscopy in semiconductors”

Published:2011-06 Issue:6 Volume:45 Page:832-834
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Yarykin N. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378261106025X.pdf

Reference4 articles.

1. E. A. Tatokhin, A. V. Kadantsev, A. E. Bormontov, and V. G. Zadorozhnii, Fiz. Tekh. Poluprovodn. 44, 1031 (2010) [Semiconductors 44, 997 (2010)].

2. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).

3. L. S. Berman and A. A. Lebedev, Deep-Level Transient Spectroscopy in Semiconductors (Nauka, Leningrad, 1981) [in Russian].

4. E. A. Tatokhin, A. V. Kadantsev, A. E. Bormontov, and V. G. Zadorozhnii, Vestn. Voronezh. State Tekh. Univ. 5, 40 (2009).

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