Mechanism of nucleation of oriented cadmium telluride films forming under highly nonequilibrium conditions-Reference-Cited by-同舟云学术

Mechanism of nucleation of oriented cadmium telluride films forming under highly nonequilibrium conditions

Published:2006-07 Issue:7 Volume:40 Page:770-773
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Belyaev A. P.,Rubets V. P.,Antipov V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782606070050.pdf

Reference10 articles.

1. A. P. Belyaev, V. P. Rubets, M. Yu. Nuzhdin, and I. P. Kalinkin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 641 (2003) [Semiconductors 37, 617 (2003)].

2. A. P. Belyaev, V. P. Rubets, M. Yu. Nuzhdin, and I. P. Kalinkin, Zh. Fiz. Khim. 77, 1883 (2003).

3. A. P. Belyaev, V. P. Rubets, and V. V. Antipov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 204 (2005) [Semiconductors 39, 189 (2005)].

4. I. P. Kalinkin, V. V. Aleskovski’, and A. I. Simashkevich, Epitaxial Films of the II–VI Compounds (Leningr. Gos. Univ., Leningrad, 1973) [in Russian].

5. A. P. Belyaev, V. P. Rubets, and S. A. Kukushkin, Fiz. Tverd. Tela (St. Petersburg) 43, 1901 (2001) [Phys. Solid State 43, 1979 (2001)].

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