Formation of an interphase boundary under highly nonequilibrium conditions-Reference-Cited by-同舟云学术

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Formation of an interphase boundary under highly nonequilibrium conditions

Published:2007-12 Issue:12 Volume:41 Page:1457-1459
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Belyaev A. P.,Rubets V. P.,Antipov V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782607120147.pdf

Reference4 articles.

1. I. V. Bondar’, A. A. Vaĭpolin, V. Yu. Rud’, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 41, 160 (2007) [Semiconductors 41, 155 (2007)].

2. A. P. Belyaev and V. P. Rubets, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 294 (2001) [Semiconductors 35, 279 (2001)].

3. A. P. Belyaev, V. P. Rubets, and V. V. Antipov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 40, 790 (2006) [Semiconductors 40, 770 (2006)].

4. A. P. Belyaev, V. P. Rubets, and I. P. Kalinkin, Fiz. Tverd. Tela (St. Petersburg) 39, 382 (1997) [Phys. Solid State 39, 333 (1997)].

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and galvanomagnetic properties of cadmium telluride films synthesized under highly nonequilibrium conditions;Semiconductors;2008-11

2. Comparative analysis of the mechanisms of interface formation in a film structure under equilibrium and strongly nonequilibrium condition;Semiconductors;2008-05

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