Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction-Reference-Cited by-同舟云学术

Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction

Published:2019-06 Issue:6 Volume:53 Page:838-843
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Shashkina A. S.,Hanin S. D.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782619060198.pdf

Reference16 articles.

1. I. V. Grekhov and Yu. N. Serezhkin, Avalanche Breakdown of a p–n Junction in Semiconductors (Energiya, Leningrad, 1980), p. 80 [in Russian].

2. M. V. Vorotkov, N. N. Skvortsov, and A. S. Shashkina, in Proceedings of the 3rd All-Russia Conference on Innovation Technologies in Media Education (SPbGIKiT, St. Petersburg, 2015), No. 3, p. 65.

3. V. K. Ionychev, Extended Abstract of Cand. Sci. Dissertation (Ogarev Mordovian State Univ., Saransk, 1999).

4. R. H. Haitz, J. Appl. Phys. 36, 3123 (1965).

5. S. V. Bulyarskii, Yu. N. Serezhkin, and V. K. Ionychev, Semiconductors 33, 1216 (1999).

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