Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off-Reference-Cited by-同舟云学术

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Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off

Published:2008-06 Issue:6 Volume:42 Page:675-688
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Gurin N. T.,Sabitov O. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608060080.pdf

Reference18 articles.

1. E. Bringuier, J. Appl. Phys. 66, 1314 (1989).

2. V. P. Singh, S. Krishna, and D. C. Morton, J. Appl. Phys. 70, 1811 (1991).

3. N. T. Gurin, A. V. Shlyapin, and O. Yu. Sabitov, Zh. Tekh. Fiz. 72(2), 74 (2002) [Tech. Phys. 47, 215 (2002)].

4. N. T. Gurin, A. V. Shlyapin, and O. Yu. Sabitov, Zh. Tekh. Fiz. 73, 100 (2003) [Tech. Phys. 48, 479 (2003)].

5. N. T. Gurin, A. M. Afanas’ev, O. Yu. Sabitov, and D. V. Ryabov, Fiz. Tekh. Poluprovodn. 40, 949 (2006) [Semiconductors 40, 920 (2006)].

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties of nanocrystalline ZnS:Mn thin films prepared by chemical bath deposition method;Journal of Materials Science: Materials in Electronics;2012-04-25

2. Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn;Semiconductors;2010-04

3. Characteristics of surface states at the insulator-semiconductor interface of ZnS:Mn thin-film electroluminescent emitters;Technical Physics Letters;2010-01

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