Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn-Reference-Cited by-同舟云学术

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Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn

Published:2010-04 Issue:4 Volume:44 Page:498-507
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Gurin N. T.,Sabitov O. Yu.,Afanas’ev A. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610040160.pdf

Reference18 articles.

1. G. O. Müller, R. Mach, B. Selle, and G. Schulz, Phys. Stat. Solidi A 110, 657 (1998).

2. E. Bringuier, J. Appl. Phys. 66, 1314 (1989).

3. N. T. Gurin, D. V. Ryabov, O. Yu. Sabitov, and A. M. Afanas’ev, Pis’ma Zh. Tekh. Fiz. 31(3), 79 (2005) [Tech. Phys. Lett. 31, 125 (2005)].

4. N. T. Gurin, A. M. Afanas’ev, O. Yu. Sabitov, and D. V. Ryabov, Fiz. Tekh. Poluprovodn. 40, 949 (2006) [Semiconductors 40, 920 (2006)].

5. N. T. Gurin, O. Yu. Sabitov, and A. M. Afanas’ev, Fiz. Tekh. Poluprovodn. 41, 1168 (2007) [Semiconductors 41, 1150 (2007)].

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3. Preparation of nanocrystalline Ni doped ZnS thin films by ammonia-free chemical bath deposition method and optical properties;Journal of Luminescence;2014-05

4. Optical properties of nanocrystalline ZnS:Mn thin films prepared by chemical bath deposition method;Journal of Materials Science: Materials in Electronics;2012-04-25

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