Measuring on thin film electroluminescent devices-Reference-Cited by-同舟云学术

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Measuring on thin film electroluminescent devices

Published:1988-12-16 Issue:2 Volume:110 Page:657-669
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Müller G. O.,Mach R.,Selle B.,Schulz G.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. , , , and , SID '74 Digest Los Angeles (p. 84).

2. SID Lecture Notes Anaheim 1988 (p. 12).

3. , , and , SID '87 Digest New Orleans (p. 230).

4. , , , , and , SID '88 Digest Anaheim (p. 293).

5. SID Lecture Notes Anaheim 1988.

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1. Effect of surface morphology on manganese ion luminescence kinetics in ZnS:Mn2+ films;Inorganic Materials;2011-02

2. Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn;Semiconductors;2010-04

3. Characteristics of surface states at the insulator-semiconductor interface of ZnS:Mn thin-film electroluminescent emitters;Technical Physics Letters;2010-01

4. Growth, characterization and modeling of alternating-current thin-film electroluminescent devices;Progress in Crystal Growth and Characterization of Materials;2001-01

5. Selection of dielectrics for alternating-current thin-film electroluminescent device;Thin Solid Films;1999-06

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