Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic-Reference-Cited by-同舟云学术

Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic

Published:2010-05 Issue:5 Volume:44 Page:590-601
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Torkhov N. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610050088.pdf

Reference31 articles.

1. R. Tung, Mater. Sci. Eng. R35, 1 (2001).

2. S. M. Sze, Modern Semiconductor Device Physics (Wiley, New York, 1997).

3. V. G. Bozhkov, O. Yu. Malakhovskii, and A. M. Misik, Izv. Vyssh. Uchebn. Zaved., Ser. Fiz. 3, 97 (1983).

4. V. G. Bozhkov, O. Yu. Malakhovskii, A. G. Bychkov, and E. G. Sirotkin, Izv. Vyssh. Uchebn. Zaved., Ser. Fiz. 5(190), 14 (1987).

5. R. K. Mamedov, Perypheral Currents and Effective Contact Areas of Schottky Diodes, Vestn. Bakinsk. Univ., Ser. Fiz.-Mat. Nauk (Baku, 2002) [in Russian].

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