Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon-Reference-Cited by-同舟云学术

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Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon

Published:2017-11 Issue:11 Volume:51 Page:1449-1452
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Okhapkin A. I.,Korolyov S. A.,Yunin P. A.,Drozdov M. N.,Kraev S. A.,Khrykin O. I.,Shashkin V. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S1063782617110215/fulltext.html

Reference14 articles.

1. R. A. Andrievskii, Russ. Chem. Rev. 64, 291 (1995).

2. C. E. Morosanu and E. Segal, Mater. Chem. 7, 79 (1982).

3. N. Susa, H. Kanbe, H. Ando, and Y. Ohmachi, Jpn. J. Appl. Phys. 19, L675 (1980).

4. H. Huang, K. J. Winchester, A. Suvorova, B. R. Lawn, Y. Liud, X. Z. Hud, J. M. Dell, and L. Faraone, Mater. Sci. Eng. A 435–436, 453 (2006).

5. T. Takagi, Y. Nakagawa, Y. Watabe, K. Takechi, and S. Nishida, Vacuum 51, 751 (1998).

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