Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons-Reference-Cited by-同舟云学术

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Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons

Published:2010-03 Issue:3 Volume:44 Page:380-384
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Poklonski N. A.,Gorbachuk N. I.,Shpakovski S. V.,Lastovskii S. B.,Wieck A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610030188.pdf

Reference37 articles.

1. L. S. Berman, Study of Semiconductors by Capacitance Methods (Nauka, Leningrad, 1972) [in Russian].

2. M. McPherson, Physica B 344(1–4), 52 (2004).

3. A. Saadoune, L. Dehimi, N. Sengouga, M. McPherson, and B. K. Jones, Sol. St. Electron. 50, 1178 (2006).

4. A. A. Lebedev, N. A. Sobolev, and B. M. Urunbaev, Fiz. Tekh. Poluprovodn. 16, 1874 (1982) [Sov. Phys. Semicond. 16, 1207 (1982)].

5. A. M. Emel’yanov, N. A. Sobolev, and A. N. Yakimenko, Fiz. Tekh. Poluprovodn. 35, 330 (2001) [Semiconductors 35, 316 (2001)].

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes;Acta Physica Polonica A;2015-11

2. Quality of the p-Si crystal surface and radiation-stimulated changes in the characteristics of Bi-Si-Al surface-barrier structures;Semiconductors;2012-08

3. Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation;Technical Physics;2010-10

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