Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes-Reference-Cited by-同舟云学术

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Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

Published:2015-11 Issue:5 Volume:128 Page:891-894
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Poklonski N.A.¹,Gorbachuk N.I.¹,Nha VoQuang¹,Shpakovski S.V.²,Filipenya V.A.²,Skuratov V.A.³,Kołtunowicz T.N.⁴,Kukharchyk N.⁵,Becker H.-W.⁵,Wieck A.⁵

Affiliation:

1. Belarusian State University, 4 Nezavisimosti Pr., BY-220030, Minsk, Belarus

2. JSC "INTEGRAL", 121A Kazintsa Str., BY-220108, Minsk, Belarus

3. Joint Institute for Nuclear Research, 6 Joliot-Curie Str., RU-141980 Dubna, Russia

4. Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland

5. Ruhr-University Bochum, 150 Universitaets Str., D-44780 Bochum, Germany

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

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