Radiation-produced defects in germanium: Experimental data and models of defects-Reference-Cited by-同舟云学术

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Radiation-produced defects in germanium: Experimental data and models of defects

Published:2017-12 Issue:12 Volume:51 Page:1571-1587
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Emtsev V. V.,Kozlovski V. V.,Poloskin D. S.,Oganesyan G. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1134/S1063782617120065/fulltext.html

Reference35 articles.

1. Gemanium-Based Technologies. From Materials to Devices, Ed. by C. Claeys and E. Simoen (Elsevier, Amsterdam etc., 2007).

2. G. D. Watkins, Mater. Sci. Semicond. Proces. 3, 227 (2000).

3. V. V. Emtsev, T. V. Mashovets, and S. M. Ryvkin, in Radiation Damage and Defects in Semiconductors, Inst. Phys. Conf. Ser. 16, 17 (1972).

4. T. V. Mashovets and V. V. Emtsev, in Lattice Defects in Semiconductors, Inst. Phys. Conf. Ser. 23, 103 (1975).

5. V. V. Emtsev, T. V. Mashovets, and E. A. Tropp, Sov. Phys. Semicond. 12, 169 (1977).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron irradiation: From test to material tailoring;Europhysics Letters;2023-09-01

2. Towards the Modeling of Impurity-Related Defects in Irradiated n-Type Germanium: a Challenge to Theory;Semiconductors;2020-11

3. Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge;Semiconductors;2018-12

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