The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb-Reference-Cited by-同舟云学术

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The variance law and scattering mechanism of charge carriers in Zn-doped p-In0.5Ga0.5Sb

Published:2010-09 Issue:9 Volume:44 Page:1149-1152
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Zeynalov C. A.,Aliev F. F.,Damirova S. Z.,Tairov B. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782610090071.pdf

Reference7 articles.

1. B. M. Askrov, Electron Transport Phenomena in Semiconductors (Nauka, Moscow, 1985) [in Russian].

2. F. F. Aliev, G. G. Guseĭnov, G. P. Pashaev, G. M. Agamirzoeva, and A. B. Magerramov, Neorg. Mater. 44, 156 (2008) [Inorg. Mater. 44, 115 (2008)].

3. S. A. Zeynalov and S. A. Aliyev, Turk. J. Phys. 20, 477 (1996).

4. W. M. Coderre and J. C. Woolley, Canad. J. Phys. 47, 2553 (1969).

5. M. J. Aubin, M. B. Tomas, E. H. Van Tongerloo, and J. C. Wolley, Canad. J. Phys. 47, 631 (1969).

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