Electron effective-mass values in GaxIn1−xSb alloys

Abstract

Room-temperature measurements of Faraday rotation, magneto–thermoelectric power, and infrared reflectance have been made on homogeneous coarsely polycrystalline n-type samples of GaxIn1−xSb alloys produced by the horizontal Bridgman technique. Using these data and a Kane equation for the (000) conduction band, values of the bottom of the band effective mass m00* have been determined over the composition range 0 < x < 0.85, i.e. the range in which the subsidiary [Formula: see text] minima make no contribution. The results from the three different techniques show very good agreement. From the data, values are obtained also for the square of the matrix element P2, the high-frequency dielectric constant ε∞, and the scattering parameter s for the various alloy specimens.