Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditions-Reference-Cited by-同舟云学术

Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditions

Published:2002-03 Issue:3 Volume:36 Page:358-361
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aleksandrov O. V.,Zakhar’in A. O.,Sobolev N. A.,Nikolaev Yu. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1461417.pdf

Reference17 articles.

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3. F. Priolo, S. Coffa, G. Franzo, et al., J. Appl. Phys. 74, 4936 (1993).

4. J. Michel, J. Palm, X. Duan, et al., Mater. Sci. Forum 258–263, 1485 (1997).

5. J. L. Benton, J. Michel, L. C. Kimerling, et al., J. Appl. Phys. 70, 2667 (1991).

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