1. 1. Egamberdiev BE. Electron spectroscopic studies of the physical properties of epitaxial combinations and ion-implanted layers in silicon. Doctoral dissertation. 2003; С 243.
2. 2. Egamberdiev BE, Abdugabborov M. Study of some features of the distribution profiles of implanted Mn, Fe and Ni atoms in Si. Vestnik TSTU. 1994; Т.1-2: С.39-44.
3. 3. Egamberdiev BE, Iliev KhM, Nasriddinov SS, Toshev AR, Zoirova ME. Photoelectric properties of silicon-based solar cells implanted with rare earth elements. Conference. Russia. Vladivostok. 2006; 204-208.
4. 4. Egamberdiev BE. Mallaev AS. Silicon silicide structures based on ion doping. T.:ed. "Science and Technology". 2019; 168с.
5. 5. Egamberdiev BE, Rakhmanov AT. Study by the ROP method of the distribution profile of ion-implanted iron atoms in silicon.Science and world. 2018;1:1(53);с.57-60.