Changes in properties of a 〈porous silicon〉/silicon system during gradual etching off of the porous silicon layer-Reference-Cited by-同舟云学术

Changes in properties of a 〈porous silicon〉/silicon system during gradual etching off of the porous silicon layer

Published:2002-03 Issue:3 Volume:36 Page:330-335
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Venger E. F.,Gorbach T. Ya.,Kirillova S. I.,Primachenko V. E.,Chernobai V. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1461412.pdf

Reference24 articles.

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3. S. V. Svechnikov, A. V. Sachenko, G. A. Sukach, et al., Optoélektron. Poluprovodn. Tekh., No. 27, 3 (1994).

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5. V. F. Agekyan, A. M. Aprelev, R. Laiho, and Yu. A. Stepanov, Fiz. Tverd. Tela (St. Petersburg) 42, 1393 (2000) [Phys. Solid State 42, 1431 (2000)].

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