Photoluminescence and Raman studies of the structure of a thick porous silicon film-Reference-Cited by-同舟云学术

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Photoluminescence and Raman studies of the structure of a thick porous silicon film

Published:2015-03 Issue:3 Volume:42 Page:77-80
ISSN:1068-3356
Container-title:Bulletin of the Lebedev Physics Institute
language:en
Short-container-title:Bull. Lebedev Phys. Inst.

Author:

Melnik N. N.,Tregulov V. V.

Publisher

Allerton Press

Subject

Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.3103/S1068335615030033.pdf

Reference6 articles.

1. E. A. Tutov, E. N. Bormontov, V. M. Kashkarov, et al., Zh. Tekh. Fiz. 73(11), 83 (2003) [Tech. Phys. 48, 1442 (2003)].

2. D. N. Goryachev, L. V. Belyakov, and O.M. Sreseli, Fiz. Tekh. Poluprovodn. 38, 739 (2004) [Semiconductors 38, 712 (2004)].

3. E. F. Venger, T. Ya. Gorbach, S. I. Kirillov, et al., Fiz. Tekh. Poluprovodn. 36, 349 (2002) [Semiconductors 36, 330 (2002).

4. M. Yang, D. Huang, and P. Hao, J. Appl. Phys. 75, 651 (1994).

5. B. M. Bullakh, B. R. Jumayev, N. E. Korsunskaya, et al., Fiz. Tekh. Poluprovodn. 36, 587 (2002) [Semiconductors 36, 558 (2002)].

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