Influence of electronic (charge) state of E traps on their introduction rate in irradiated n-GaAs-Reference-Cited by-同舟云学术

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Influence of electronic (charge) state of E traps on their introduction rate in irradiated n-GaAs

Published:2003-01 Issue:1 Volume:37 Page:20-27
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Brudnyi V. N.,Peshev V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1538533.pdf

Reference24 articles.

1. L. S. Smirnov, Physical Processes in Irradiated Semiconductors (Nauka, Novosibirsk, 1977).

2. D. Pons and J. C. Bourgoin, J. Phys. C 18(20), 3839 (1985).

3. L. W. Aukerman and R. D. Graft, Phys. Rev. 127, 1576 (1962).

4. L. W. Aukerman, in Semiconductors and Semimetals, Ed. by R. K. Willardson and A. C. Bear (Academic, New York, 1968), Vol. 4, p. 343.

5. D. Pons, Inst. Phys. Conf. Ser. 59, 269 (1981).

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